PART |
Description |
Maker |
AP2122 AP2122AK-3.3TRE1 AP2122AK-1.5TRE1 AP2122AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited BCDSEMI
|
AP2121N-3.0TRE1 AP2121N-3.3TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
http://
|
AP2126K-3.3TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
AP2128K-1.0TRG1 AP2128K-1.2TRG1 AP2128K-3.3TRG1 AP |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
CES2312 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
CES2313 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET From old datasheet system mTrenchMOS extremely low level FET
|
Philips
|